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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10062618 B1

PDFFull Text
Date of Patent:
Aug. 28, 2018

Filed:

May. 26, 2015

Method and structure for formation of replacement metal gate field effect transistors

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Takashi Ando, Tuckahoe, NY (US);

Aritra Dasgupta, Wappingers Falls, NY (US);

Balaji Kannan, Fishkill, NY (US);

Unoh Kwon, Fishkill, NY (US);

Assignee:

GLOBALFOUNDRIES, INC., Grandy Cayman, KY;

Attorneys:

George S. Blasiak, Esq.

Heslin Rothenberg Farley & Mesiti, P.C.

Primary Examiner:

Joseph C Nicely

Assistant Examiner:

Lamont Koo

Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 21/8238 (2006.01); H01L 21/324 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823857 (2013.01); H01L 21/324 (2013.01); H01L 21/823842 (2013.01); H01L 27/0922 (2013.01); H01L 29/42372 (2013.01); H01L 29/4966 (2013.01);
Abstract

Embodiments of the present invention provide a process that maintains a 'keep cap' metal nitride layer on PFET devices within a CMOS structure. The keep cap metal nitride layer is in place while an N-type work function metal is formed on the NFET devices within the CMOS structure. A sacrificial rare earth oxide layer, such as a lanthanum oxide layer is used to facilitate removal of the n-type work function metal selective to the keep cap metal nitride layer.

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Quick Actions:

Ando, Takashi. (2018). Method and structure for formation of replacement metal gate field effect transistors (U.S. Patent No. 10062618). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10062618

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