The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Apr. 15, 2016
Globalfoundries Inc., Grand Cayman, KY;
Donghun Kang, Niskayuna, NY (US);
Balaji Kannan, Clifton Park, NY (US);
Jinping Liu, Ballston Lake, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method of fabricating multi Vdevices and the resulting device are disclosed. Embodiments include forming a high-k dielectric layer over a substrate; forming a first TiN layer, a first barrier layer, a second TiN layer, a second barrier layer, and a third TiN layer consecutively over the high-k dielectric layer; forming a first masking layer over the third TiN layer in a first region; removing the third TiN layer in second and third regions, exposing the second barrier layer in the second and third regions; removing the first masking layer; removing the exposed second barrier layer; forming a second masking layer over the third TiN layer in the first region and the second TiN layer in the second region; removing the second TiN layer in the third region, exposing the first barrier layer in the third region; removing the second masking layer; and removing the exposed first barrier layer.