The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Jan. 27, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Takashi Ando, Tuckahoe, NY (US);
Aritra Dasgupta, Wappingers Falls, NY (US);
Oleg Gluschenkov, Tannersville, NY (US);
Balaji Kannan, Fishkill, NY (US);
Unoh Kwon, Fishkill, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/513 (2013.01); H01L 21/823857 (2013.01); H01L 27/088 (2013.01); H01L 29/511 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract
Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.