The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Jan. 10, 2008
Ishtiaq Ahsan, Wallkill, NY (US);
Andrew Alexander Mcknight, Bronxville, NY (US);
Katsunori Onishi, Fukuoka, JP;
Keith Howard Tabakman, Fishkill, NY (US);
Ishtiaq Ahsan, Wallkill, NY (US);
Andrew Alexander McKnight, Bronxville, NY (US);
Katsunori Onishi, Fukuoka, JP;
Keith Howard Tabakman, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor defect type determination method and structure. The method includes providing a semiconductor wafer comprising a first field effect transistor (FET) comprising a first type of structure and a second FET comprising a second different type of structure. A first procedure is performed to determine if a first current flow exists between a first conductive layer formed on the first FET and a second conductive layer formed on the first FET. A second procedure is performed to determine if a second current flow exists between a third conductive layer formed the second FET and a fourth conductive layer formed on the second FET. A determination is made from combining results of the first procedure and results of the second procedure that the first FET and the second FET each comprise a specified type of defect.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile