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For the Inventor, By the Inventor

Wappingers Falls, NY, United States of America

Ishtiaq Ahsan

USPTO Granted Patents = 11

Average Co-Inventor Count = 2.8

ph-index = 4

Forward Citations = 186(Granted Patents)


Location History:

  • Wappingers Falls, NY (US) (2006 - 2010)
  • Wallkill, NY (US) (2009 - 2013)

Company Filing History:

goldMedal11 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2006-2013

where 'Filed Patents' based on already Granted Patents

11 patents (USPTO):
1. 8610451 - Post silicide testing for replacement high-k metal gate technologies (2013-12-17),
2. 8039837 - In-line voltage contrast detection of PFET silicide encroachment (2011-10-18),
3. 7781239 - Semiconductor device defect type determination method and structure (2010-08-24),
4. 7733109 - Test structure for resistive open detection using voltage contrast inspection and related methods (2010-06-08),
5. 7719005 - Structure and method for monitoring and characterizing pattern density dependence on thermal absorption in a semiconductor manufacturing process (2010-05-18),
6. 7612371 - Structure to monitor arcing in the processing steps of metal layer build on silicon-on-insulator semiconductors (2009-11-03),
7. 7515502 - Memory array peripheral structures and use (2009-04-07),
8. 7408421 - Determining thermal absorption using ring oscillator (2008-08-05),
9. 7396694 - Structure for monitoring semiconductor polysilicon gate profile (2008-07-08),
10. 7135346 - Structure for monitoring semiconductor polysilicon gate profile (2006-11-14),
11. 7119545 - Capacitive monitors for detecting metal extrusion during electromigration (2006-10-10),

Title: Ishtiaq Ahsan: Innovator in Semiconductor Technologies

Introduction

Ishtiaq Ahsan is a prominent inventor based in Wappingers Falls, NY (US). He has made significant contributions to the field of semiconductor technologies, holding a total of 11 patents. His work focuses on enhancing the performance and reliability of integrated circuit devices.

Latest Patents

Among his latest patents, one notable invention is related to post silicide testing for replacement high-k metal gate technologies. This test structure is designed for evaluating transistor gate structures in integrated circuits. It includes probe pads, conductive lines, and a gate electrode structure, facilitating electrical contact through localized dielectric breakdown. Another significant patent involves in-line voltage contrast detection of PFET silicide encroachment. This semiconductor test structure features a PFET transistor with a unique configuration that allows for effective grounding and testing of the transistor's body.

Career Highlights

Ishtiaq Ahsan is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in semiconductor technologies. His extensive experience and expertise have positioned him as a key player in the industry.

Collaborations

He has collaborated with notable coworkers, including Edward P. Maciejewski and Oliver Desmond Patterson, contributing to various projects and advancements in their field.

Conclusion

Ishtiaq Ahsan's contributions to semiconductor technologies through his patents and work at IBM highlight his role as a leading inventor in the industry. His innovative approaches continue to shape the future of integrated circuit design and testing.

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