The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2008

Filed:

Jul. 05, 2006
Applicants:

Ishtiaq Ahsan, Wappingers Falls, NY (US);

Edward P. Maciejewski, Wappingers Falls, NY (US);

Noah D. Zamdmer, Sleepy Hollow, NY (US);

Inventors:

Ishtiaq Ahsan, Wappingers Falls, NY (US);

Edward P. Maciejewski, Wappingers Falls, NY (US);

Noah D. Zamdmer, Sleepy Hollow, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03B 27/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A device and method for determining a thermal absorption of a part of an integrated circuit (IC) are provided. A specially designed ring oscillator including a non-silicided poly-silicon resistor is used for the determination. The parameters of the ring oscillator are designed/tuned so that a delay of the ring oscillator varies predominantly with a variation in a resistance of the non-silicided poly-silicon resistor. The dimensions of the non-silicided poly-silicon resistor are large enough so that the resistance of the non-silicided poly-silicon resistor is immune to the small process variations of the poly-silicon length and width. The resistance of the non-silicided poly-silicon resistor varies with the thermal absorption of the part of the IC. As such, the thermal absorption of the part of the IC may be determined based on the delay of the ring oscillator.


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