The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Nov. 16, 2010
Ishtiaq Ahsan, Wallkill, NY (US);
David M. Fried, Brewster, NY (US);
Lidor Goren, Fishkill, NY (US);
Jiun-hsin Liao, Wappingers Falls, NY (US);
Ishtiaq Ahsan, Wallkill, NY (US);
David M. Fried, Brewster, NY (US);
Lidor Goren, Fishkill, NY (US);
Jiun-Hsin Liao, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A test structure for testing transistor gate structures in an IC device includes one or more probe pads formed at an active area of the IC device; one or more first conductive lines formed at the active area of the IC device, in electrical contact with the one or more probe pads; one or more second conductive lines formed at a gate conductor level of the IC device, in electrical contact with the one or more first conductive lines; and a gate electrode structure to be tested in electrical contact with the one or more second conductive lines; wherein the electrical contact between the one or more second conductive lines and the one or more first conductive lines is facilitated by a localized dielectric breakdown of a gate dielectric material disposed between the one or more second conductive lines and the one or more first conductive lines.