The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2013
Filed:
May. 18, 2012
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Jacob B. Dadson, Wappingers Falls, NY (US);
Paul J. Higgins, Hopewell Junction, NY (US);
Babar A. Khan, Ossining, NY (US);
John J. Moore, Highland, NY (US);
Christopher C. Parks, Poughkeepsie, NY (US);
Rohit S. Takalkar, Wappingers Falls, NY (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Jacob B. Dadson, Wappingers Falls, NY (US);
Paul J. Higgins, Hopewell Junction, NY (US);
Babar A. Khan, Ossining, NY (US);
John J. Moore, Highland, NY (US);
Christopher C. Parks, Poughkeepsie, NY (US);
Rohit S. Takalkar, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.