This inventor holds 2 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 2012-2013.
Company Filing History:
Years Active: 2012-2013
Title: John J Moore: Innovator in Semiconductor Technology
Introduction
John J Moore is a notable inventor based in Highland, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in dynamic random access memory (DRAM) devices. With a total of 2 patents, his work has had a considerable impact on the industry.
Latest Patents
One of John J Moore's latest patents is a technique to create a buried plate in embedded dynamic random access memory devices. This method involves forming a trench structure in a semiconductor substrate and exposing the sidewalls of the trench to an arsenic-containing gas. This process allows for the adsorption of an arsenic-containing layer on the sidewalls of the trench. Subsequently, a material layer is deposited on the sidewalls to encapsulate the arsenic-containing layer between the material layer and the trench sidewalls. This innovative approach enhances the performance and efficiency of DRAM devices.
Career Highlights
John J Moore is currently employed at International Business Machines Corporation, commonly known as IBM. His role at IBM has allowed him to work on cutting-edge technologies and contribute to advancements in semiconductor design and manufacturing.
Collaborations
Throughout his career, John has collaborated with several talented individuals, including Ashima B Chakravarti and Jacob B Dadson. These collaborations have fostered innovation and have been instrumental in the development of new technologies in the semiconductor field.
Conclusion
John J Moore is a distinguished inventor whose work in semiconductor technology has led to significant advancements in DRAM devices. His innovative techniques and collaborations continue to shape the future of the industry.