The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2011

Filed:

Jun. 09, 2008
Applicants:

Ashima B. Chakravarti, Hopewell Junction, NY (US);

Anthony I. Chou, Beacon, NY (US);

Toshiharu Furukawa, Essex Junction, VT (US);

Steven J. Holmes, Guilderland, NY (US);

Wesley C. Nazle, Wappingers Falls, NY (US);

Inventors:

Ashima B. Chakravarti, Hopewell Junction, NY (US);

Anthony I. Chou, Beacon, NY (US);

Toshiharu Furukawa, Essex Junction, VT (US);

Steven J. Holmes, Guilderland, NY (US);

Wesley C. Nazle, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and then exposes the heated nitride and oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.


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