Essex Junction, VT, United States of America

Toshiharu Furukawa

Average Co-Inventor Count = 4.6

ph-index = 29

Forward Citations = 4,526(Granted Patents)

Forward Citations (Not Self Cited) = 4,311(Sep 21, 2024)

DiyaCoin DiyaCoin 3.89 

Inventors with similar research interests:


Location History:

  • Essex Junction, NY (US) (2010)
  • Essex Juction, VT (US) (2014)
  • Essex Junction, VT (US) (1997 - 2020)


Years Active: 1997-2020

where 'Filed Patents' based on already Granted Patents

280 patents (USPTO):
1 patent (CIPO):

Title: Toshiharu Furukawa: Innovative Patents and Contributions to Semiconductor Technology

Introduction:

Toshiharu Furukawa, based in Essex Junction, VT, is a prolific inventor in the field of semiconductor technology. With an impressive portfolio of 280 patents, Furukawa has made significant contributions to the industry. This article explores his latest patents, career highlights, and notable collaborations.

Latest Patents:

Among Furukawa's latest patents is a groundbreaking method of cleaving a single crystal substrate parallel to its active planar surface. This method involves using a stress-mandrel with a higher coefficient of thermal expansion than the parent single crystal substrate. By bonding the stress-mandrel to the major surface of the single crystal substrate and subsequently cooling it, a thermal stress is induced, successfully cleaving the parent substrate. This innovative technique has wide-ranging applications, including the creation of photovoltaic cells.

Another notable patent involves the development of extremely thin semiconductor-on-insulator (ETSOI) layers. These layers are characterized by distinct semiconductor-on-insulator regions of varying thicknesses, shallow trench isolations, and an oxide cap. This invention holds tremendous potential in enhancing semiconductor performance and enabling advanced integrated circuit design.

Career Highlights:

During his career, Furukawa has worked with prominent organizations in the semiconductor industry. Notably, he has contributed to the research and development efforts of esteemed companies such as IBM (International Business Machines Corporation) and Semivation, LLC. Furukawa's expertise and innovative approaches to semiconductor manufacturing have played a pivotal role in advancement within these organizations.

Collaborations:

Furukawa's collaborations have further enriched his patent portfolio and technological contributions. Working alongside accomplished peers such as Mark Charles Hakey and David Vaclav Horak, Furukawa has been able to delve deeper into various aspects of semiconductor technology. These collaborations have facilitated the exchange of ideas, leading to enhanced inventions and mutual success in the field.

Conclusion:

Toshiharu Furukawa's remarkable contributions to the field of semiconductor technology have solidified his status as a respected inventor. His patents, including the groundbreaking method of cleaving single crystal substrates and the development of extremely thin semiconductor-on-insulator layers, highlight his innovative mindset and dedication to advancing the industry. With an admirable career history and collaborations with accomplished professionals, Furukawa has left an indelible mark on the world of semiconductor innovation.

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