The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Mar. 31, 2004
Toshiharu Furukawa, Essex Junction, VT (US);
Charles William Koburger, Iii, Delmar, NY (US);
James Albert Slinkman, Montpelier, VT (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Charles William Koburger, III, Delmar, NY (US);
James Albert Slinkman, Montpelier, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A silicon-on-insulator (SOI) device and structure having locally strained regions in the silicon active layer formed by increasing the thickness of underlying regions of a buried insulating layer separating the silicon active layer from the substrate. The stress transferred from the underlying thickened regions of the insulating layer to the overlying strained regions increases carrier mobility in these confined regions of the active layer. Devices formed in and on the silicon active layer may benefit from the increased carrier mobility in the spaced-apart strained regions.