The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Aug. 05, 2008
Bruce B. Doris, Brewster, NY (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Mark C. Hakey, Fairfax, VT (US);
Steven J. Holmes, Guilderland, NY (US);
David V. Horak, Essex Junction, VT (US);
Charles W. Koburger, Iii, Delmar, NY (US);
Bruce B. Doris, Brewster, NY (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Mark C. Hakey, Fairfax, VT (US);
Steven J. Holmes, Guilderland, NY (US);
David V. Horak, Essex Junction, VT (US);
Charles W. Koburger, III, Delmar, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A sidewall image transfer process for forming sub-lithographic structures employs a layer of sacrificial material that is deposited over a structure layer and covered by a cover layer. The sacrificial material layer and the cover layer are patterned with conventional resist and etched to form a sacrificial mandrel. The edges of the mandrel are oxidized or nitrided in a plasma at low temperature, after which the material layer and the cover layer are stripped, leaving sublithographic sidewalls. The sidewalls are used as hardmasks to etch sublithographic gate structures in the gate conductor layer.