The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Jan. 27, 2012
Nathaniel C. Berliner, Albany, NY (US);
Kangguo Cheng, Guilderland, NY (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Douglas C. LA Tulipe, Jr., Guilderland, NY (US);
William R. Tonti, Essex Junction, VT (US);
Nathaniel C. Berliner, Albany, NY (US);
Kangguo Cheng, Guilderland, NY (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Douglas C. La Tulipe, Jr., Guilderland, NY (US);
William R. Tonti, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness includes: measuring a thickness of a semiconductor-on-insulator (SOI) layer at a plurality of locations; determining a removal thickness at each of the plurality of locations; and implanting ions at the plurality of locations. The implanting is dynamically based on the removal thickness at each of the plurality of locations. The method further includes oxidizing the SOI layer to form an oxide layer, and removing the oxide layer.