The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Oct. 29, 2018
Semivation, Llc, Fairfax, VT (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Mark Charles Hakey, Fairfax, VT (US);
David Vaclav Horak, Essex Junction, VT (US);
Peter H. Mitchell, Jericho, VT (US);
William P. Parker, Waitsfield, VT (US);
William R. Tonti, Greenland, NH (US);
Semivation, LLC, Fairfax, VT (US);
Abstract
A method of cleaving off a daughter single crystal substrate from a parent single crystal substrate includes providing a stress-mandrel and the parent a single crystal substrate. The parent single crystal substrate has a major surface and an edge surface that intersects the major surface. The major surface extends along a major surface plane. The stress-mandrel has a stress-mandrel coefficient of thermal expansion that is higher than the parent single crystal coefficient of thermal expansion. The method includes bonding the stress-mandrel to the major surface, and cooling the parent single crystal substrate and the stress-mandrel. The cooling of the parent single crystal substrate bonded to the stress-mandrel provides a thermal stress in the parent single crystal substrate sufficient to cleave the parent single crystal substrate. The cleaving extends substantially along a plane parallel to the plane of the major surface. In one embodiment the cleaved daughter substrate was used to make a photovoltaic cell.