The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Jul. 11, 2011
Toshiharu Furukawa, Essex Junction, VT (US);
Mark C. Hakey, Fairfax, VT (US);
Steven J. Holmes, Guilderland, NY (US);
David V. Horak, Essex Junction, VT (US);
Charles W. Koburger, Iii, Delmar, NY (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Mark C. Hakey, Fairfax, VT (US);
Steven J. Holmes, Guilderland, NY (US);
David V. Horak, Essex Junction, VT (US);
Charles W. Koburger, III, Delmar, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A transistor. The transistor including: a well region in a substrate; a gate dielectric layer on a top surface of the well region; a polysilicon gate electrode on a top surface of the gate dielectric layer; spacers formed on opposite sidewalls of the polysilicon gate electrode; source/drain regions formed on opposite sides of the polysilicon gate electrode in the well region; a first doped region in the polysilicon gate electrode, the first doped region extending into the polysilicon gate electrode from a top surface of the polysilicon gate electrode; and a buried second doped region in the polysilicon gate electrode.