Wappingers Falls, NY, United States of America

Wesley C Nazle

This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wesley C Nazle. Retrieved from https://idiyas.com/inventor/wesley-c-nazle

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Wesley C. Nazle: Innovator in Semiconductor Manufacturing

Introduction

Wesley C. Nazle is a notable inventor based in Wappingers Falls, NY (US). He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent.

Latest Patents

Wesley holds a patent for the "Selective deposition of germanium spacers on nitride." This method involves selectively forming a germanium structure within semiconductor manufacturing processes. It effectively removes the native oxide from a nitride surface in a chemical oxide removal (COR) process. The process then exposes the heated nitride and oxide surface to a heated germanium-containing gas, allowing for the selective formation of germanium only on the nitride surface, while avoiding the oxide surface.

Career Highlights

Wesley is currently employed at International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to explore and develop advanced techniques in semiconductor technology.

Collaborations

Wesley has collaborated with notable colleagues, including Ashima B. Chakravarti and Anthony I. Chou. Their combined expertise contributes to the innovative environment at IBM.

Conclusion

Wesley C. Nazle's contributions to semiconductor manufacturing through his patent demonstrate his commitment to innovation in technology. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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