The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2010

Filed:

Jul. 08, 2008
Applicants:

Ashima B. Chakravarti, Hopewell Junction, NY (US);

Judson Robert Holt, Wappingers Falls, NY (US);

Jeremy John Kempisty, Poughkeepsie, NY (US);

Suk Hoon Ku, Beacon, NY (US);

Woo-hyeong Lee, Poughquag, NY (US);

Amlan Majumdar, White Plains, NY (US);

Ryan Matthew Mitchell, Wake Forest, NC (US);

Renee Tong MO, Briarcliff Manor, NY (US);

Zhibin Ren, Hopewell Junction, NY (US);

Dinkar Singh, Chicago, IL (US);

Inventors:

Ashima B. Chakravarti, Hopewell Junction, NY (US);

Judson Robert Holt, Wappingers Falls, NY (US);

Jeremy John Kempisty, Poughkeepsie, NY (US);

Suk Hoon Ku, Beacon, NY (US);

Woo-Hyeong Lee, Poughquag, NY (US);

Amlan Majumdar, White Plains, NY (US);

Ryan Matthew Mitchell, Wake Forest, NC (US);

Renee Tong Mo, Briarcliff Manor, NY (US);

Zhibin Ren, Hopewell Junction, NY (US);

Dinkar Singh, Chicago, IL (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor fabrication method. The method includes providing a semiconductor substrate, wherein the semiconductor substrate includes a semiconductor material. Next, a top portion of the semiconductor substrate is removed. Next, a first semiconductor layer is epitaxially grown on the semiconductor substrate, wherein a first atomic percent of a first semiconductor material in the first semiconductor layer is equal to a substrate atomic percent of the substrate semiconductor material in the semiconductor substrate.


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