Jeremy John Kempisty

Title: The Innovations of Jeremy John Kempisty

Introduction

Jeremy John Kempisty is a notable inventor based in Poughkeepsie, NY (US). He has made significant contributions to the field of semiconductor fabrication, holding a total of 4 patents. His work focuses on improving the efficiency and effectiveness of semiconductor devices.

Latest Patents

Kempisty's latest patents include a method of forming the source and drain of a field-effect transistor and a method for improving semiconductor surfaces. The first patent discloses a semiconductor fabrication method that utilizes eSiGe to apply desired stresses to the channel region of a field-effect transistor. This innovative approach involves a two-step fabrication process that balances morphology and fill consistency. The second patent outlines a method that includes the removal of a top portion of a semiconductor substrate, followed by the epitaxial growth of a first semiconductor layer. This method ensures that the atomic percent of the first semiconductor material matches that of the substrate, enhancing the overall quality of the semiconductor surface.

Career Highlights

Kempisty is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the field and improving device performance.

Collaborations

Some of his notable coworkers include Judson Robert Holt and Lance Genicola, who have collaborated with him on various projects within the semiconductor industry.

Conclusion

Jeremy John Kempisty's contributions to semiconductor fabrication are noteworthy, and his innovative patents reflect his commitment to advancing technology in this field. His work at IBM continues to influence the development of more efficient semiconductor devices.