The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Mar. 09, 2005
Lance Genicola, Whitehall, PA (US);
Mark J. Hurley, Poughkeepsie, NY (US);
Jeremy J. Kempisty, Beacon, NY (US);
Paul D. Kirsch, Fishkill, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Suri Hedge, Hollowville, NY (US);
Lance Genicola, Whitehall, PA (US);
Mark J. Hurley, Poughkeepsie, NY (US);
Jeremy J. Kempisty, Beacon, NY (US);
Paul D. Kirsch, Fishkill, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Suri Hedge, Hollowville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.