International Business Machines Corporation

Jeremy John Kempisty

Judson Robert Holt

Ravikumar Ramachandran

Paul Daniel Kirsch

Mark J Hurley

Suri G Hedge

Lance Genicola

Amlan Majumdar

Renee Tong Mo

Abhishek Dube

Zhibin Ren

Ashima B Chakravarti

Keith Howard Tabakman

Dinkar Virendra Singh

Shwu-Jen Jeng

Woo-Hyeong Lee

Hasan Munir Nayfeh

Eric C T Harley

Suk Hoon Ku

Ryan Matthew Mitchell

A semiconductor fabrication method involving the use of eSiGe is disclosed. The eSiGe approach is useful for applying the desired stresses to the channel region of a field effect transistor, but also can introduce complications into the semiconductor fabrication process. Embodiments of the present invention disclose a two-step fabrication process in which a first layer of eSiGe is applied using a low hydrogen flow rate, and a second eSiGe layer is applied using a higher hydrogen flow rate. This method provides a way to balance the tradeoff of morphology, and fill consistency when using eSiGe. Embodiments of the present invention promote a pinned morphology, which reduces device sensitivity to epitaxial thickness, while also providing a more consistent fill volume, amongst various device widths, thereby providing a more consistent eSiGe semiconductor fabrication process.

Method of forming source and drain of a field-effect-transistor and structure thereof

A semiconductor fabrication method. The method includes providing a semiconductor substrate, wherein the semiconductor substrate includes a semiconductor material. Next, a top portion of the semiconductor substrate is removed. Next, a first semiconductor layer is epitaxially grown on the semiconductor substrate, wherein a first atomic percent of a first semiconductor material in the first semiconductor layer is equal to a substrate atomic percent of the substrate semiconductor material in the semiconductor substrate.

Method for improving semiconductor surfaces

A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.

Method of monitoring introduction of interfacial species

Method of monitoring introduction on interfacial species

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Poughkeepsie, NY, United States of America

Jeremy John Kempisty