The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Sep. 06, 2006
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Patrick W. Dehaven, Poughkeepsie, NY (US);
Sadanand V. Deshpande, LaGrangeville, NY (US);
Anita Madan, Danbury, CT (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Patrick W. DeHaven, Poughkeepsie, NY (US);
Sadanand V. Deshpande, LaGrangeville, NY (US);
Anita Madan, Danbury, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of the present invention provide a method of fabricating a contact structure in a layer of dielectric material between a semiconductor device and a back-end-of-line interconnect. The method includes creating at least one contact opening in said layer of dielectric material; forming a first TiN film through a chemical-vapor deposition process, said first TiN film lining said contact opening; and forming a second TiN film through a physical vapor deposition process, said second TiN film lining said first TiN film. A contact structure fabricated according to embodiments of the invention is also provided.