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For the Inventor, By the Inventor

Danbury, CT, United States of America

Anita Madan

This inventor holds 21 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in Semiconductor Technology. Top assignees: International Business Machines Corporation, Novellus Systems Incorporated, Applied Materials, Inc.. Active years: 2006-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Anita Madan. Retrieved from https://idiyas.com/inventor/anita-madan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 19.0

 

Average Co-Inventor Count = 4.9

ph-index = 5

Forward Citations = 72(Granted Patents)


Location History:

  • Danbury, NY (US) (2009 - 2010)
  • Danbury, CT (US) (2006 - 2018)

Company Filing History:

goldMedal20 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal2 out of 993 
 
Novellus Systems Incorporated
 patents
bronzeMedal1 out of 14,454 
 
Applied Materials, Inc.
 patents
4. 1 out of 5,671 
 
Globalfoundries Inc.
 patents
5. 1 out of 1,060 
 
Globalfoundries Singapore Pte. Ltd.
 patents
6. 1 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2006-2018

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Areas of Expertise:
Capacitance Monitoring
X-Ray Diffraction
Semiconductor Wafers
Dislocation Engineering
CMOS Device Strain
Integrated Circuits
Nitride Films
N-Channel MOSFETs
Thin Film Resistors
Polycrystalline Silicon
Gas Cluster Ion Beam
Carbon Doped Films
21 patents (USPTO):Explore Patents
1. 10008421 - Capacitance monitoring using x-ray diffraction (2018-06-26),
2. 9870960 - Capacitance monitoring using X-ray diffraction (2018-01-16),
3. 9201027 - Evaluating semiconductor wafers for pitch walking and/or epitaxial merge (2015-12-01),
4. 8865572 - Dislocation engineering using a scanned laser (2014-10-21),
5. 8865571 - Dislocation engineering using a scanned laser (2014-10-21),
6. 8716037 - Measurement of CMOS device channel strain by X-ray diffraction (2014-05-06),
7. 8138066 - Dislocation engineering using a scanned laser (2012-03-20),
8. 8105955 - Integrated circuit system with carbon and non-carbon silicon (2012-01-31),
9. 7838428 - Method of repairing process induced dielectric damage by the use of GCIB surface treatment using gas clusters of organic molecular species (2010-11-23),
10. 7804136 - Method of forming nitride films with high compressive stress for improved PFET device performance (2010-09-28),
11. 7769134 - Measuring strain of epitaxial films using micro x-ray diffraction for in-line metrology (2010-08-03),
12. 7622386 - Method for improved formation of nickel silicide contacts in semiconductor devices (2009-11-24),
13. 7491660 - Method of forming nitride films with high compressive stress for improved PFET device performance (2009-02-17),
14. 7485572 - Method for improved formation of cobalt silicide contacts in semiconductor devices (2009-02-03),
15. 7473608 - N-channel MOSFETs comprising dual stressors, and methods for forming the same (2009-01-06),

Title: Anita Madan: Innovator in Semiconductor Technologies

Introduction

Anita Madan is a prominent inventor based in Danbury, CT, known for her substantial contributions to the field of semiconductor technologies. With an impressive portfolio of 21 patents, she has demonstrated expertise in innovating methods that enhance the functioning and monitoring of semiconductor substrates.

Latest Patents

Among her latest patents, Anita developed a groundbreaking method for capacitance monitoring using x-ray diffraction. This innovative process involves measuring the difference between a primary and a secondary X-ray diffraction peak, where the primary peak corresponds to an unstrained portion of a semiconductor substrate, and the secondary peak relates to a strained portion. The difference between these peaks reveals a delta shift peak that indicates changes in the crystal lattice caused by stress applied to the strained portion of the substrate. Notably, the delta shift peak encompasses variations in deep trench capacitance, marking a significant advancement in semiconductor monitoring techniques.

Career Highlights

Anita has established her career through valuable experiences at notable companies such as IBM (International Business Machines Corporation) and Novellus Systems Incorporated. Her positions in these organizations have allowed her to work on innovative projects, honing her skills and paving the way for her patent achievements.

Collaborations

Throughout her career, Anita has had the opportunity to collaborate with esteemed professionals, including Nancy R Klymko and Kwong Hon Wong. These partnerships have likely contributed to her innovative spirit and technical advancements in semiconductor research.

Conclusion

Anita Madan's work in semiconductor technologies illustrates her role as a leading inventor. With her extensive patent portfolio and experience in significant corporations, she continues to make a lasting impact on the field through her innovative solutions. As research and technologies advance, Anita's contributions will undoubtedly influence future developments in semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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