The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Dec. 05, 2017
International Business Machines Corporation, Armonk, NY (US);
Donghun Kang, Hopewell Junction, NY (US);
Kriteshwar K. Kohli, Fishkill, NY (US);
Oh-jung Kwon, Hopewell Junction, NY (US);
Anita Madan, Danbury, CT (US);
Conal E. Murray, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method includes measuring a difference between a primary X-ray diffraction peak and a secondary X-ray diffraction peak, the primary X-ray diffraction peak corresponds to an unstrained portion of a semiconductor substrate and the secondary X-ray diffraction peak corresponds to a strained portion of the semiconductor substrate, the difference between the primary X-ray diffraction peak and the secondary X-ray diffraction peak includes a delta shift peak that corresponds to changes in a crystal lattice caused by a stress applied to the strained portion of the semiconductor substrate, the delta shift peak includes variations in a deep trench capacitance.