The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Feb. 17, 2009
Thomas N. Adam, Slingerland, NY (US);
Eric C. Harley, Lagrangeville, NY (US);
Anita Madan, Danbury, CT (US);
Teresa L. Pinto, Wallkill, NY (US);
Thomas N. Adam, Slingerland, NY (US);
Eric C. Harley, Lagrangeville, NY (US);
Anita Madan, Danbury, CT (US);
Teresa L. Pinto, Wallkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In a method for use of x-ray diffraction to measure the strain on the top silicon germanium layer of an SOI substrate, the location of the peak diffraction area of an upper silicon layer of the SOI substrate is determined by first determining the peak diffraction area of the upper silicon layer on a reference pad (where the SOI thickness is about 700-900 Angstroms) within a die formed on a semiconductor wafer. The x-ray beam then moves to that location on the pad of interest to be measured and begins the XRD scan on the pad of interest to ultimately determine the strain of the top silicon germanium layer of the pad of interest.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile