The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Dec. 06, 2006
Anita Madan, Danbury, CT (US);
Robert J. Purtell, West Jordan, UT (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Jun-keun Kwak, Seoul, KR;
Anita Madan, Danbury, CT (US);
Robert J. Purtell, West Jordan, UT (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Jun-Keun Kwak, Seoul, KR;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming silicide contacts for semiconductor devices includes subjecting a silicon containing semiconductor wafer to a degas treatment at an initial degas temperature of about 250 to about 400° C., transferring the semiconductor wafer from a degas chamber to a deposition chamber, depositing a nickel containing layer over the wafer following transfer of the wafer from the degas chamber to the deposition chamber, and annealing the semiconductor wafer so as to create silicide regions at portions on the wafer where nickel material is formed over silicon.