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For the Inventor, By the Inventor

Mohegan Lake, NY, United States of America

Robert J Purtell

USPTO Granted Patents = 28 

Average Co-Inventor Count = 3.3

ph-index = 8

Forward Citations = 256(Granted Patents)


Location History:

  • Mohegan Lake, NY (US) (1999 - 2012)
  • West Jordan, UT (US) (2008 - 2014)

Company Filing History:

goldMedal25 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal3 out of 1,302 
 
Fairchild Semiconductor Corporation
 patents
bronzeMedal1 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 1999-2014

where 'Filed Patents' based on already Granted Patents

28 patents (USPTO):
1. 8658500 - Single crystal U-MOS gates using microwave crystal regrowth (2014-02-25),
2. 8569183 - Low temperature dielectric flow using microwaves (2013-10-29),
3. 8298385 - Method and apparatus for forming nickel silicide with low defect density in FET devices (2012-10-30),
4. 8143125 - Structure and method for forming a salicide on the gate electrode of a trench-gate FET (2012-03-27),
5. 7759741 - Method and apparatus for forming nickel silicide with low defect density in FET devices (2010-07-20),
6. 7696034 - Methods of base formation in a BiCOMS process (2010-04-13),
7. 7659199 - Air break for improved silicide formation with composite caps (2010-02-09),
8. 7622386 - Method for improved formation of nickel silicide contacts in semiconductor devices (2009-11-24),
9. 7504336 - Methods for forming CMOS devices with intrinsically stressed metal silicide layers (2009-03-17),
10. 7485572 - Method for improved formation of cobalt silicide contacts in semiconductor devices (2009-02-03),
11. 7456095 - Method and apparatus for forming nickel silicide with low defect density in FET devices (2008-11-25),
12. 7417290 - Air break for improved silicide formation with composite caps (2008-08-26),
13. 7390721 - Methods of base formation in a BiCMOS process (2008-06-24),
14. 7344983 - Clustered surface preparation for silicide and metal contacts (2008-03-18),
15. 7320938 - Method for reducing dendrite formation in nickel silicon salicide processes (2008-01-22),

Title: The Innovative Journey of Robert J Purtell

Introduction: Robert J Purtell, a talented inventor hailing from Mohegan Lake, NY (US), has made significant contributions to the field of innovation with his creative mind and dedication.

Latest Patents: Robert J Purtell's latest patents showcase his commitment to pushing the boundaries of technology and design, with a focus on improving everyday life through his inventions.

Career Highlights: Throughout his illustrious career, Robert J Purtell has been recognized for his groundbreaking work in various industries, earning a reputation as a visionary inventor with a keen eye for detail and problem-solving.

Collaborations: Robert J Purtell has collaborated with leading experts in the field, leveraging their collective knowledge and expertise to bring his innovative ideas to life. His collaborative spirit has led to the development of groundbreaking inventions that have left a lasting impact on the industry.

Conclusion: In conclusion, Robert J Purtell's passion for innovation and his relentless pursuit of excellence have solidified his position as a prominent figure in the world of inventors. His contributions continue to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.

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