Low temperature dielectric flow using microwaves

Abstract

Semiconductor devices and methods for making such devices are described. The semiconductor devices contain dielectric layers that have been deposited and/or flowed by the application of microwave energy ('MW dielectric layers'). The dielectric layers can be made by providing a substrate in a reaction chamber, flowing a precursor gas mixture (containing atoms that react to form a dielectric material) in the reaction chamber, and then subjecting the gas mixture to microwave energy at a frequency and power density sufficient to cause the atoms of the precursor gas mixture to react and deposit to form a dielectric layer on the substrate. As well, the devices can be made by applying microwave energy to an already-deposited dielectric film at a frequency and power density sufficient to cause the atoms of the deposited dielectric material to flow. Using microwave energy permits the dielectric layer to be formed using low temperature processing, providing several benefits to the semiconductor device along with process flow efficiency and low cost. Other embodiments are described.