The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2009
Filed:
Sep. 25, 2006
Anita Madan, Danbury, CT (US);
Robert J. Purtell, West Jordan, UT (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Anita Madan, Danbury, CT (US);
Robert J. Purtell, West Jordan, UT (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming silicide contacts for semiconductor devices includes subjecting a silicon containing semiconductor wafer to a degas treatment at a temperature of about 400° C., transferring the semiconductor wafer from a degas chamber to a deposition chamber, depositing a cobalt layer over the wafer at a point in time when the semiconductor wafer has cooled to temperature range of about 275-300° C., depositing a cap layer over the cobalt layer, and annealing the semiconductor wafer so as to create silicide contacts at portions on the wafer where cobalt is formed over silicon.