The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Jul. 28, 2006
Robert J. Purtell, West Jordan, UT (US);
Yun-yu Wang, Poughquag, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Robert J. Purtell, West Jordan, UT (US);
Yun-Yu Wang, Poughquag, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Internatioanl Business Machines Corporation, Armonk, NY (US);
Abstract
A method for reducing dendrite formation in a self-aligned, silicide process for a semiconductor device includes forming a silicide metal layer over a semiconductor substrate, the semiconductor device having one or more diffusion regions, one or more isolation areas and one or more gate structures formed thereon. The concentration of metal rich portions of the metal layer is reduced through the introduction of silicon thereto, and the semiconductor device is annealed.