The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8138066 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 20, 2012

Filed:

Oct. 01, 2008
Applicants:

Chung Woh Lai, Singapore, SG;

Xiao HU Liu, Briarcliff manor, NY (US);

Anita Madan, Danbury, CT (US);

Klaus W. Schwarz, Somers, NY (US);

J. Campbell Scott, Los Gatos, CA (US);

Inventors:

Chung Woh Lai, Singapore, SG;

Xiao Hu Liu, Briarcliff manor, NY (US);

Anita Madan, Danbury, CT (US);

Klaus W. Schwarz, Somers, NY (US);

J. Campbell Scott, Los Gatos, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.


Find Patent Forward Citations

Lai, Chung. (2012). Dislocation engineering using a scanned laser (U.S. Patent No. 8138066). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8138066

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