The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Dec. 11, 2006
Shyng-tsong Chen, Patterson, NY (US);
Nancy R. Klymko, Hopewell Junction, NY (US);
Anita Madan, Danbury, CT (US);
Sanjay Mehta, Niskayuna, NY (US);
Steven E. Molis, Patterson, NY (US);
Shyng-Tsong Chen, Patterson, NY (US);
Nancy R. Klymko, Hopewell Junction, NY (US);
Anita Madan, Danbury, CT (US);
Sanjay Mehta, Niskayuna, NY (US);
Steven E. Molis, Patterson, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
When an interconnect structure is built on porous ultra low k (ULK) material, the bottom and/or sidewall of the trench and/or via is usually damaged by a following metallization or cleaning process which may be suitable for dense higher dielectric materials. Embodiments of the present invention may provide a method of repairing process induced dielectric damage from forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes treating an exposed area of the ILD material to create a carbon-rich area, and metallizing the carbon-rich area. One embodiment includes providing treatment to an exposed sidewall area of the ILD material to create a carbon-rich area by irradiating the exposed area using a gas cluster ion beam (GCIB) generated through a gas including a straight chain or branched, aliphatic or aromatic hydrocarbon, and metallizing the carbon-rich area.