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For the Inventor, By the Inventor

Niskayuna, NY, United States of America

Sanjay C Mehta

This inventor holds 124 USPTO granted patents and 16 published patent applications, primarily in Nanosheet Transistors (CPC class H01L29-66795). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Stmicroelectronics Gmbh. Active years: 2007-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sanjay C Mehta. Retrieved from https://idiyas.com/inventor/sanjay-c-mehta

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 124 

% Patents Active = 53.2

Average Co-Inventor Count = 4.2

ph-index = 11

Forward Citations = 650(Granted Patents)

Forward Citations (Not Self Cited) = 585(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Slingerlands, NY (US) (2010)
  • Poughkeepsie, NY (US) (2007 - 2011)
  • Albany, NY (US) (2012 - 2014)
  • Niskayuna, NY (US) (2010 - 2023)

Company Filing History:

goldMedal116 out of 166,483 
 
International Business Machines Corporation
 patents
silverMedal24 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal2 out of 2,891 
 
Stmicroelectronics Gmbh
 patents
4. 1 out of 1,913 
 
Adeia Semiconductor Bonding Technologies Inc.
 patents
5. 1 out of 30 
 
Adeia Semiconductor Solutions LLC
 patents
6. 1 out of 289 
 
Renesas Electronics America Inc.
 patents
where one patent can have more than one assignee

Years Active: 2007-2026

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Areas of Expertise:
Nanosheet Transistors
Phase Change Memory
Vertical FETs
Dielectric Isolation
High Thermal Budget
Doped Glass
Silicon Oxide Layer
Device Spacers
Epitaxial Source/Drain
Transistor Performance
Aggressive Fin-Pitch Scaling
124 patents (USPTO):Explore Patents
1. 12677451 - Bottom dielectric isolation for vertically stacked devices (2026-07-07),
2. 12575113 - High density memory with stacked nanosheet transistors (2026-03-10),
3. 12250835 - Isolation between vertically stacked nanosheet devices (2025-03-11),
4. 12224203 - Air gap spacer formation for nano-scale semiconductor devices (2025-02-11),
5. 11658062 - Air gap spacer formation for nano-scale semiconductor devices (2023-05-23),
6. 11456415 - Phase change memory cell with a wrap around and ring type of electrode contact and a projection liner (2022-09-27),
7. 11302797 - Approach to bottom dielectric isolation for vertical transport fin field effect transistors (2022-04-12),
8. 11264569 - Phase change memory device (2022-03-01),
9. 11171204 - High thermal budget compatible punch through stop integration using doped glass (2021-11-09),
10. 11152460 - High thermal budget compatible punch through stop integration using doped glass (2021-10-19),
11. 10892339 - Gate first technique in vertical transport FET using doped silicon gates with silicide (2021-01-12),
12. 10879375 - Gate tie-down enablement with inner spacer (2020-12-29),
13. 10840354 - Approach to bottom dielectric isolation for vertical transport fin field effect transistors (2020-11-17),
14. 10784371 - Self aligned top extension formation for vertical transistors (2020-09-22),
15. 10784258 - Selective contact etch for unmerged epitaxial source/drain regions (2020-09-22),

Title: Sanjay C Mehta - Pioneering Inventor from Niskayuna, NY

Introduction: Sanjay C Mehta is a distinguished inventor based in Niskayuna, NY, known for his groundbreaking contributions to the field of innovations and patents.

Latest Patents: Sanjay C Mehta holds several patents in various technological domains, showcasing his versatility and ingenuity in inventing novel solutions to complex problems.

Career Highlights: With a career spanning over two decades, Sanjay C Mehta has worked tirelessly to push the boundaries of technological advancements. His innovative spirit and dedication have led to the development of cutting-edge solutions that have made a significant impact in the industry.

Collaborations: Throughout his career, Sanjay C Mehta has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His ability to work in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: Sanjay C Mehta's passion for innovation, coupled with his technical expertise, has established him as a prominent figure in the world of inventions and patents. His relentless pursuit of excellence continues to inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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