The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Mar. 13, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ruqiang Bao, Niskayuna, NY (US);
Hemanth Jagannathan, Niskayuna, NY (US);
Paul Charles Jamison, Hopewell Junction, NY (US);
Choonghyun Lee, Rensselaer, NY (US);
Sanjay C. Mehta, Niskayuna, NY (US);
Vijay Narayanan, New York, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 29/42356 (2013.01); H01L 29/66666 (2013.01); H01L 29/66795 (2013.01); H01L 29/7788 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A technique relates to a semiconductor device. A gate stack is formed on a fin, the gate stack being formed to have a length in a vertical direction. A gate contact is formed adjacent to the gate stack for the length of the gate stack in the vertical direction.