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For the Inventor, By the Inventor

Hopewell Junction, NY, United States of America

Paul Charles Jamison

USPTO Granted Patents = 67 

Average Co-Inventor Count = 4.5

ph-index = 12

Forward Citations = 539(Granted Patents)

DiyaCoin DiyaCoin = 0.20 


Inventors with similar research interests:


Location History:

  • Hopwell Junction, NY (US) (2002)
  • Rensselaer, NY (US) (2018 - 2019)
  • Averill Park, NY (US) (2016 - 2021)
  • Poestenkill, NY (US) (2018 - 2021)
  • Hopewell Junction, NY (US) (2001 - 2024)

Company Filing History:

goldMedal64 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal4 out of 10,295 
 
Tokyo Electron Limited
 patents
bronzeMedal1 out of 355 
 
Canon Anelva Corporation
 patents
4. 1 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 2001-2024

where 'Filed Patents' based on already Granted Patents

67 patents (USPTO):
1. 11956975 - BEOL fat wire level ground rule compatible embedded artificial intelligence integration (2024-04-09),
2. 11700778 - Method for controlling the forming voltage in resistive random access memory devices (2023-07-11),
3. 11594596 - Back-end-of-line compatible metal-insulator-metal on-chip decoupling capacitor (2023-02-28),
4. 11309383 - Quad-layer high-k for metal-insulator-metal capacitors (2022-04-19),
5. 11251285 - Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices (2022-02-15),
6. 11121209 - Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor (2021-09-14),
7. 11094801 - Oxide isolated fin-type field-effect transistors (2021-08-17),
8. 11038013 - Back-end-of-line compatible metal-insulator-metal on-chip decoupling capacitor (2021-06-15),
9. 10991881 - Method for controlling the forming voltage in resistive random access memory devices (2021-04-27),
10. 10978551 - Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor (2021-04-13),
11. 10930566 - Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments (2021-02-23),
12. 10892339 - Gate first technique in vertical transport FET using doped silicon gates with silicide (2021-01-12),
13. 10886362 - Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement (2021-01-05),
14. 10833148 - Leakage current reduction in stacked metal-insulator-metal capacitors (2020-11-10),
15. 10680083 - Oxide isolated fin-type field-effect transistors (2020-06-09),

Title: Paul Charles Jamison: A Pioneer in Resistive Random Access Memory Technologies

Introduction

Paul Charles Jamison, based in Hopewell Junction, NY, is a distinguished inventor with an impressive record of 67 patents. His work primarily focuses on advancements in resistive random access memory (ReRAM) technologies, which are crucial for the evolving landscape of data storage and processing.

Latest Patents

His recent patents showcase innovative methods and structures for integrating ReRAM into advanced semiconductor technology. One notable patent titled "BEOL Fat Wire Level Ground Rule Compatible Embedded Artificial Intelligence Integration" describes structures and methods for integrating resistance random access memory in the back-end-on-the-line fat wire level. This invention introduces a ReRAM device area contact structure that significantly enhances the electrical performance of embedded AI systems. Another significant patent, "Method for Controlling the Forming Voltage in Resistive Random Access Memory Devices," details a novel method to control the forming voltage of dielectric films in ReRAM devices. This method utilizes plasma-excited treatment gases to create additional intrinsic defects, thereby lowering the required forming voltage without altering the physical thickness of the dielectric film.

Career Highlights

Throughout his career, Paul has contributed to renowned technology firms, notably IBM and Tokyo Electron Limited. His experience at these companies has positioned him at the forefront of memory technology research and development.

Collaborations

Paul has collaborated with notable peers in the field, including Hemanth Jagannathan and Vijay Narayanan. These partnerships have further enriched his work and led to significant technological advancements.

Conclusion

Paul Charles Jamison's extensive portfolio of patents and his expertise in resistive random access memory technologies underscore his status as a key innovator in the semiconductor industry. His contributions not only enhance current technologies but also pave the way for future advancements in data storage and processing solutions.

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