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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11251285 B1

PDFFull Text
Date of Patent:
Feb. 15, 2022

Filed:

Aug. 28, 2019

Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruqiang Bao, Wappingers Falls, NY (US);

Hemanth Jagannathan, Niskayuna, NY (US);

Paul C. Jamison, Hopewell Junction, NY (US);

ChoongHyun Lee, Rensselaer, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Robert Sullivan

Primary Examiner:

Grant S Withers

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66553 (2013.01); H01L 21/02247 (2013.01); H01L 21/02252 (2013.01); H01L 21/324 (2013.01); H01L 29/42384 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/66666 (2013.01); H01L 29/66772 (2013.01); H01L 29/7827 (2013.01); H01L 29/78618 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01);
Abstract

A method of forming a vertical fin field effect transistor device, including, forming one or more vertical fins with a hardmask cap on each vertical fin on a substrate, forming a fin liner on the one or more vertical fins and hardmask caps, forming a sacrificial liner on the fin liner, and forming a bottom spacer layer on the sacrificial liner.

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Bao, Ruqiang. (2022). Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices (U.S. Patent No. 11251285). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11251285

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