The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Mar. 27, 2017
International Business Machines Corporation, Armonk, NY (US);
Takashi Ando, Tuckahoe, NY (US);
Eduard A. Cartier, New York, NY (US);
Hemanth Jagannathan, Niskayuna, NY (US);
Paul C. Jamison, Poestenkill, NY (US);
Vijay Narayanan, New York, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method for forming a metal-insulator-metal (MIM) capacitor on a semiconductor substrate is presented. The method includes forming a first electrode defining columnar grains, forming a dielectric layer over the first electrode, and forming a second electrode over the dielectric layer. The first and second electrodes can be titanium nitride (TiN) electrodes. The dielectric layer can include one of hafnium oxide and zirconium oxide deposited by atomic layer deposition (ALD). The ALD results in deposition of high-k films in grain boundaries of the first electrode.