The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
May. 31, 2019
Tokyo Electron Limited, Tokyo, JP;
International Business Machines Corporation, Armonk, NY (US);
Steven Consiglio, Albany, NY (US);
Cory Wajda, Albany, NY (US);
Kandabara Tapily, Albany, NY (US);
Takaaki Tsunomura, Albany, NY (US);
Takashi Ando, Tuckahoe, NY (US);
Paul C. Jamison, Hopewell Junction, NY (US);
Eduard A. Cartier, New York, NY (US);
Vijay Narayanan, New York, NY (US);
Marinus J. P. Hopstaken, Carmel, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing Hgas, and exposing the dielectric film to the plasma-excited treatment gas to create additional defects in the dielectric film without substantially changing a physical thickness of the dielectric film, where the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film and the plasma-excited treatment gas may be formed using a microwave plasma source.