Marinus J P Hopstaken

Title: Marinus J P Hopstaken: Innovator in Resistive Random Access Memory Technology

Introduction

Marinus J P Hopstaken is a notable inventor based in Carmel, NY (US). He has made significant contributions to the field of resistive random access memory (ReRAM) technology, holding a total of 8 patents. His innovative methods have advanced the capabilities of memory devices, making them more efficient and effective.

Latest Patents

One of his latest patents is a method for controlling the forming voltage in resistive random access memory devices. This method involves depositing a dielectric film that contains intrinsic defects on a substrate. It also includes forming a plasma-excited treatment gas containing Hgas and exposing the dielectric film to this gas. This process creates additional defects in the dielectric film without substantially changing its physical thickness. The introduction of these additional defects lowers the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film, and the plasma-excited treatment gas may be formed using a microwave plasma source.

Career Highlights

Throughout his career, Marinus has worked with prominent companies such as IBM and Tokyo Electron Limited. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in memory technology.

Collaborations

Marinus has collaborated with notable coworkers, including Kevin K Chan and Young-Hee Kim. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Marinus J P Hopstaken is a distinguished inventor whose work in resistive random access memory technology has made a lasting impact. His innovative methods and collaborations with industry leaders continue to shape the future of memory devices.