The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Jul. 03, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Joel P. de Souza, Putnam Valley, NY (US);

John Collins, Pleasantville, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

John A. Ott, Greenwood Lake, NY (US);

Marinus J. P. Hopstaken, Carmel, NY (US);

Stephen W. Bedell, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/04 (2006.01); H01M 10/0525 (2010.01); H01M 10/0567 (2010.01); H01M 10/0562 (2010.01); H01M 4/134 (2010.01); H01M 4/1395 (2010.01); H01M 4/485 (2010.01); H01M 4/66 (2006.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/0426 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/485 (2013.01); H01M 4/661 (2013.01); H01M 10/0525 (2013.01); H01M 10/0562 (2013.01); H01M 10/0567 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01); H01M 2004/028 (2013.01);
Abstract

An anode structure for rechargeable lithium-ion batteries that have a high-capacity are provided. The anode structure, which is made utilizing an anodic etching process, is of unitary construction and includes a non-porous region and a porous region including a top porous layer (Porous Region) having a first thickness and a first porosity, and a bottom porous layer (Porous Region) located beneath the top porous layer and forming an interface with the non-porous region. At least an upper portion of the non-porous region and the entirety of the porous region are composed of silicon, and the bottom porous layer has a second thickness that is greater than the first thickness, and a second porosity that is greater than the first porosity.


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