Greenwood Lake, NY, United States of America

John Albrecht Ott

This inventor holds 77 USPTO granted patents and 11 published patent applications and 1 EPO patent, primarily in Lithium Battery Technology (CPC class H01L). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Samsung Electronics Co., Ltd.. Active years: 1999-2025.

USPTO Granted Patents = 77 (Patent Applications = 11)

% Patents Active = 51.9

EPO Patents = 1

Average Co-Inventor Count = 4.3

ph-index = 14

Forward Citations = 999(Granted Patents)

Forward Citations (Not Self Cited) = 978(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

73 out of 166,159

International Business Machines Corporation

Samsung Electronics Co., Ltd.

patents

Years Active: 1999-2025

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Areas of Expertise:

Lithium Metal Batteries

Tunable Silicon Batteries

Electrochemical Switching

FinFET Junctions

Heteroepitaxial Films

Defect Reduction

Electron Channeling

Selective Epitaxy

High Germanium Content

Gallium Nitride Devices

Solar Cell Buffer Layers

Nanowire Structures

77 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12406980 - Aluminum oxide protected lithium metal tunable 3D silicon batteries (2025-09-02),

2. 12347831 - Energy storage method using aluminum oxide protected lithium metal tunable 3D silicon batteries (2025-07-01),

3. 11003942 - Electron channeling pattern acquisition from small crystalline areas (2021-05-11),

4. 10902912 - Electrochemical switching device with protective encapsulation (2021-01-26),

5. 10840433 - MRAM with high-aspect ratio bottom electrode (2020-11-17),

6. 10833311 - Method of making an anode structure containing a porous region (2020-11-10),

7. 10755925 - Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films (2020-08-25),

8. 10658513 - Formation of FinFET junction (2020-05-19),

9. 10460937 - Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films (2019-10-29),

10. 10453683 - Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films (2019-10-22),

11. 10417519 - Electron channeling pattern acquisition from small crystalline areas (2019-09-17),

12. 10388522 - Selective epitaxy using epitaxy-prevention layers (2019-08-20),

13. 10236384 - Formation of FinFET junction (2019-03-19),

14. 10127649 - Electron channeling pattern acquisition from small crystalline areas (2018-11-13),

15. 10109737 - Method of forming high-germanium content silicon germanium alloy fins on insulator (2018-10-23),

Title: The Innovative Mind of John Albrecht Ott

Introduction: John Albrecht Ott, a talented inventor hailing from Greenwood Lake, NY (US), is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: John Albrecht Ott holds several patents in various technological domains, showcasing his continuous dedication to pushing the boundaries of what is possible in the world of inventions.

Career Highlights: Throughout his illustrious career, John Albrecht Ott has consistently demonstrated a keen eye for identifying gaps in the market and creating innovative solutions to address them. His inventions have not only improved existing technologies but have also paved the way for new advancements in the industry.

Collaborations: John Albrecht Ott has collaborated with leading tech companies, research institutions, and universities to further develop and refine his inventions. These collaborations have been instrumental in bringing his ideas to life and making a significant impact on the tech landscape.

Conclusion: John Albrecht Ott's passion for innovation, coupled with his relentless drive to create, has solidified his position as a respected inventor in the industry. His contributions continue to inspire future generations of inventors to think outside the box and pursue their creative visions.