International Business Machines Corporation

Samsung Electronics Co., Ltd.

Globalfoundries Inc.

John Albrecht Ott

Devendra K Sadana

Stephen W Bedell

Jack Oon Chu

Alexander Reznicek

Pouya Hashemi

Brent A Wacaser

Ali Khakifirooz

Alfred Grill

Kunal Mukherjee

Katherine Lynn Saenger

Cheng-Wei Cheng

Keith E Fogel

Jeehwan Kim

Joel Pereira De Souza

Kevin K Chan

Christos Dimitrios Dimitrakopoulos

Steven John Koester

Bernard S Meyerson

Khalid EzzEldin Ismail

Ghavam G Shahidi

Davood Shahrjerdi

Takashi Ando

Bahman Hekmatshoartabari

Guy M Cohen

Qinghuang Lin

Dirk Pfeiffer

Renee Tong Mo

Griselda Bonilla

Deborah A Neumayer

James Bowler Hannon

Can Bayram

John C Collins

Basanth Jagannathan

Satoshi Oida

Ageeth Anke Bol

Patricia May Mooney

Richard Hammond

Karthik Balakrishnan

Haizhou Yin

Paul Michael Solomon

Kim Yang Lee

Donald Francis Canaperi

Stefan Harrer

Chun-Yung Sung

Stanislav Polonsky

Mark B Ketchen

Augustin J Hong

Michael Joseph Rooks

John Bruley

Marinus Hopstaken

Lijuan Huang

Basanth Jaqannathan

Kangguo Cheng

Bruce Bennett Doris

Ning Li

Dureseti Chidambarrao

Martin Michael Frank

Kuen-Ting Shiu

Qiqing Christine Ouyang

Tayfun Gokmen

Nathan P Marchack

Hon-Sum Philip Wong

Jianshi Tang

Michael F Lofaro

John Rozen

Anthony Gene Domenicucci

Bahman Hekmatshoar-Tabari

Christopher Peter D'Emic

Timothy James McArdle

Anda C Mocuta

Kam-Leung Lee

Huiling Shang

Mark C Reuter

Marinus J P Hopstaken

Robert L Wisnierff

Silke H Christianson

One or more trenches in a silicon substrate have an electrically active surface at a trench base and metal layer disposed on the electrically active surface. Precursor materials are disposed and/or formed on the metal layer in the trench. An anode is patterned either exclusively in the 3D trench or in the 3D trench, sidewalls and field of the substrate, where the anode patterning transforms and/or moves the precursor materials in the trench into some novel compositions of matter and other final operational structures for the device, e.g. layers of metallic Lithium for energy storage and different concentrations of Lithium-silicon species in the substrate. A multi-faceted mechanism is disclosed for Al2O3 silicon interfacial additives. When the anode is patterned both in and outside the 3D wells, Al2O3 provides an for electron-conductive Li-metal interface that enables homogenous plating on both the insulated substrate field as well as active silicon trench base where Al2O3 acts as a barrier to Li—Si diffusion. When the anode is patterned only in the 3D trench, Al2O3 additive creates a robust, flexible, Li-permeable interface upon charge cycling, which preserves the 3D textured structure of the porous silicon anode. Additionally, the Al2O3 additive is mobilized deeper into the bulk silicon in parallel with Li+ and a conductive plasticizer upon progressive cycling—where the lithiated Al2O3 particles nucleate at defect sites and prevent mechanical degradation of the silicon anode through a combined bridge and spacer mechanism. By selecting different defined anode patterns to deposit on the 3D substrate, final operational characteristics, properties, structures, and charge storage performance for the device can be predictably designed and manufactured.

Aluminum oxide protected lithium metal tunable 3D silicon batteries

Energy storage method using aluminum oxide protected lithium metal tunable 3D silicon batteries

A method for crystal analysis includes identifying a crystalline region on a device where an electronic channeling pattern is needed to be determined, acquiring a whole image for each of a plurality of different positions for the crystalline region using a scanning electron microscope (SEM) as the crystalline region is moved to different positions. Relevant regions are extracted from the whole images. The images of the relevant regions are stitched together to form a composite map of a full electron channeling pattern representative of the crystalline region wherein the electronic channeling pattern is provided due to an increase in effective angular range between a SEM beam and a surface of the crystal region.

Electron channeling pattern acquisition from small crystalline areas

An electrochemical device includes an enclosure formed over a structure and defining an area between vertical portions of the enclosure. An electrochemical channel structure includes an electrolyte formed within the area wherein the electrolyte is protected from exposure on sidewalls of the electrolyte by the enclosure.

Electrochemical switching device with protective encapsulation

An ultra-small diameter and a tall bottom electrode for use in magnetic random access memory (MRAM) devices containing a multilayered MTJ pillar is provided. The bottom electrode is formed by depositing a thick bottom electrode layer on a surface of a metallic etch stop layer. The bottom electrode layer is then patterned by lithography and etching to provide a bottom electrode structure. An angled ion beam etch is thereafter used to trim the bottom electrode structure into a bottom electrode having a high aspect ratio (on the order of 10:1 or greater).

MRAM with high-aspect ratio bottom electrode

An anode structure for rechargeable lithium-ion batteries that have a high-capacity are provided. The anode structure, which is made utilizing an anodic etching process, is of unitary construction and includes a non-porous region and a porous region including a top porous layer (Porous Region) having a first thickness and a first porosity, and a bottom porous layer (Porous Region) located beneath the top porous layer and forming an interface with the non-porous region. At least an upper portion of the non-porous region and the entirety of the porous region are composed of silicon, and the bottom porous layer has a second thickness that is greater than the first thickness, and a second porosity that is greater than the first porosity.

Method of making an anode structure containing a porous region

A method for reducing crystalline defects in a semiconductor structure is presented. The method includes epitaxially growing a first crystalline material over a crystalline substrate, epitaxially growing a second crystalline material over the first crystalline material, and patterning and removing portions of the second crystalline material to form openings. The method further includes converting the first crystalline material into a non-crystalline material, depositing a thermally stable material in the openings, depositing a capping layer over the second crystalline material and the thermally stable material to form a substantially enclosed semiconductor structure, and annealing the substantially enclosed semiconductor structure.

Post growth heteroepitaxial layer separation for defect reduction in heteroepitaxial films

A finFET structure, and method of forming such structure, in which a germanium enriched nanowire is located in the channel region of the FET, while simultaneously having silicon-germanium fin in the source/drain region of the finFET.

Formation of FinFET junction

A method for forming an epitaxial structure includes providing a two-dimensional material on a crystal semiconductor material and opening up portions of the two-dimensional material to expose the crystal semiconductor material. A structure is epitaxially grown in the portions opened up in the crystal semiconductor material such that the epitaxial growth is selective to the exposed crystal semiconductor material relative to the two-dimensional material.

Selective epitaxy using epitaxy-prevention layers

A method of forming high germanium content silicon germanium alloy fins with controlled insulator layer recessing is provided. A silicon germanium alloy (SiGe) layer having a first germanium content is provided on a surface of an insulator layer using a first condensation process. Following the formation of a hard mask layer portion on the SiGe layer, a second condensation process is performed to convert a portion of the SiGe layer into a SiGe fin of a second germanium content that is greater than the first germanium content and other portions of the SiGe layer into a shell oxide structure located on sidewalls of the SiGe fin. After forming a fin placeholder material, a portion of each shell oxide structure is removed, while maintaining a lower portion of each shell oxide structure at the footprint of the SiGe fin.

Method of forming high-germanium content silicon germanium alloy fins on insulator

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Greenwood Lake, NY, United States of America

John Albrecht Ott