The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Oct. 30, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Stephen W. Bedell, Wappingers Falls, NY (US);

Kunal Mukherjee, Goleta, CA (US);

John A. Ott, Greenwood Lake, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Brent A. Wacaser, Putnam Valley, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06T 7/00 (2017.01); H01J 37/22 (2006.01); G06K 9/46 (2006.01); G06T 11/60 (2006.01); H01J 37/29 (2006.01); G06K 9/00 (2006.01); G06T 7/33 (2017.01);
U.S. Cl.
CPC ...
G06K 9/4604 (2013.01); G06K 9/00134 (2013.01); G06T 7/33 (2017.01); G06T 11/60 (2013.01); H01J 37/222 (2013.01); H01J 37/292 (2013.01); G06T 2200/32 (2013.01); G06T 2207/10016 (2013.01); G06T 2207/10061 (2013.01); G06T 2207/30148 (2013.01);
Abstract

A method for crystal analysis includes identifying a crystalline region on a device where an electronic channeling pattern is needed to be determined, acquiring a whole image for each of a plurality of different positions for the crystalline region using a scanning electron microscope (SEM) as the crystalline region is moved to different positions. Relevant regions are extracted from the whole images. The images of the relevant regions are stitched together to form a composite map of a full electron channeling pattern representative of the crystalline region wherein the electronic channeling pattern is provided due to an increase in effective angular range between a SEM beam and a surface of the crystal region.


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