The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2018

Filed:

Jun. 05, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Pouya Hashemi, White Plains, NY (US);

Renee T. Mo, Yorktown Heights, NY (US);

John A. Ott, Greenwood Lake, NY (US);

Alexander Reznicek, Troy, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02595 (2013.01); H01L 27/1211 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract

A method of forming high germanium content silicon germanium alloy fins with controlled insulator layer recessing is provided. A silicon germanium alloy (SiGe) layer having a first germanium content is provided on a surface of an insulator layer using a first condensation process. Following the formation of a hard mask layer portion on the SiGe layer, a second condensation process is performed to convert a portion of the SiGe layer into a SiGe fin of a second germanium content that is greater than the first germanium content and other portions of the SiGe layer into a shell oxide structure located on sidewalls of the SiGe fin. After forming a fin placeholder material, a portion of each shell oxide structure is removed, while maintaining a lower portion of each shell oxide structure at the footprint of the SiGe fin.


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