The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2020

Filed:

Jan. 04, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Pouya Hashemi, White Plains, NY (US);

Bruce B. Doris, Slingerlands, NY (US);

John A. Ott, Greenwood Lake, NY (US);

Nathan P. Marchack, New York, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/00 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 21/76885 (2013.01); H01L 27/222 (2013.01); H01L 43/12 (2013.01);
Abstract

An ultra-small diameter and a tall bottom electrode for use in magnetic random access memory (MRAM) devices containing a multilayered MTJ pillar is provided. The bottom electrode is formed by depositing a thick bottom electrode layer on a surface of a metallic etch stop layer. The bottom electrode layer is then patterned by lithography and etching to provide a bottom electrode structure. An angled ion beam etch is thereafter used to trim the bottom electrode structure into a bottom electrode having a high aspect ratio (on the order of 10:1 or greater).


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