The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Mar. 26, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Cheng-Wei Cheng, White Plains, NY (US);
Jeehwan Kim, Los Angeles, CA (US);
John A. Ott, Greenwood Lake, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); H01L 21/0254 (2013.01); H01L 21/02378 (2013.01); H01L 21/02444 (2013.01); H01L 21/02485 (2013.01); H01L 21/02527 (2013.01); H01L 21/02612 (2013.01); H01L 21/02639 (2013.01); H01L 21/02642 (2013.01); H01L 21/308 (2013.01);
Abstract
A method for forming an epitaxial structure includes providing a two-dimensional material on a crystal semiconductor material and opening up portions of the two-dimensional material to expose the crystal semiconductor material. A structure is epitaxially grown in the portions opened up in the crystal semiconductor material such that the epitaxial growth is selective to the exposed crystal semiconductor material relative to the two-dimensional material.