The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Jul. 19, 2019
International Business Machines Corporation, Armonk, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Cheng-Wei Cheng, White Plains, NY (US);
Kunal Mukherjee, Goleta, CA (US);
John A. Ott, Greenwood Lake, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Brent A. Wacaser, Putnam Valley, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for reducing crystalline defects in a semiconductor structure is presented. The method includes epitaxially growing a first crystalline material over a crystalline substrate, epitaxially growing a second crystalline material over the first crystalline material, and patterning and removing portions of the second crystalline material to form openings. The method further includes converting the first crystalline material into a non-crystalline material, depositing a thermally stable material in the openings, depositing a capping layer over the second crystalline material and the thermally stable material to form a substantially enclosed semiconductor structure, and annealing the substantially enclosed semiconductor structure.