The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Dec. 19, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
John Bruley, Poughkeepsie, NY (US);
Marinus J. P. Hopstaken, Carmel, NY (US);
Kam-Leung Lee, Putnam Valley, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 29/10 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66803 (2013.01); H01L 21/26546 (2013.01); H01L 21/26586 (2013.01); H01L 29/1041 (2013.01); H01L 29/207 (2013.01);
Abstract
Embodiments are directed to a method of forming a semiconductor device and resulting structures having a shallow, abrupt and highly activated tin (Sn) extension implant junction. The method includes forming a semiconductor fin on a substrate. A gate is formed over a channel region of the semiconductor fin. A Sn extension implant junction is formed on a surface of the semiconductor fin in the channel region.