The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2022

Filed:

Dec. 15, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kisik Choi, Watervliet, NY (US);

Takashi Ando, Eastchester, NY (US);

Paul Charles Jamison, Hopewell Junction, NY (US);

John Greg Massey, Chittenden, VT (US);

Eduard Albert Cartier, New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 21/022 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 28/40 (2013.01); H01L 28/60 (2013.01);
Abstract

A semiconductor structure, and a method of making the same includes a multiple electrode stacked capacitor containing a sequence of first metal layers interleaved with second metal layers. A quad-layer stack separates each of the first metal layers from each of the second metal layers, the quad-layer dielectric stack includes a first dielectric layer made of AlO, a second dielectric layer made of HfO, a third dielectric layer made of AlO, and a fourth dielectric layer made of HfO.


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