The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Feb. 06, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Zhenxing Bi, Niskayuna, NY (US);
Thamarai S. Devarajan, Albany, NY (US);
Balasubramanian Pranatharthiharan, Watervliet, NY (US);
Sanjay C. Mehta, Niskayuna, NY (US);
Muthumanickam Sankarapandian, Niskayuna, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66553 (2013.01); H01L 29/0649 (2013.01); H01L 29/4966 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/78642 (2013.01);
Abstract
A vertical transport fin field effect transistor (VT FinFET), including one or more vertical fins on a surface of a substrate, an L-shaped or U-shaped spacer trough on the substrate adjacent to at least one of the one or more vertical fins, and a gate dielectric layer on the sidewalls of the at least one of the one or more vertical fins and the L-shaped or U-shaped spacer trough.